St distributed and most distributed nearTD139 Formula content of 110 112 content would be the highest along with the will be the least close to the central layer; the the central layer; the texture of 110 112 texture content material of Goss texture is definitely the least at 7 min. From Figureat 7 min. From Figure three and Table could be the highest and also the content material of Goss texture may be the least 3 and Table three, the advantageous 411 148 and 111411 148 and are higher at 5 min. are greater at five min. three, the advantageous 112 textures 111 112 texturesFigure 2. ODFs of texture around the surface of decarbonized annealing samples (2 =(2= 45: (a) C C 3 (b) 850 C five min; Figure 2. ODFs of texture around the surface of decarbonized annealing samples 45 ): (a) 850 850 3 min; min; (b) 850 C five C 7 min. (c) 850 min(c) 850 C 7 min.Table 2. Content material of most important texture of decarbonized annealing samples .Temperature / C 850 Time /Min three 5 7 111 112 14.3 18.three 15.4 111 110 4.3 two.7 3.4 411 148 25.7 22.8 24.four 110 112 5.7 2.3 7.3 110 001 0.9 1.1 0.Table three. Texture content after 850 C high-temperature annealing with distinctive decarbonization annealing instances. Time/min three 5 7 111 112 three.9 0.0 7.5 111 110 four.four 0.3 two.6 411 148 4.1 0.two 11.6 110 112 0.1 0.0 3.six 110 001 59.7 96.2 61.Crystals 2021, 11,Figure two. ODFs of texture on the surface of decarbonized annealing samples (2 = 45: (a) 850 C 3 min; (b) 850 C 5 min(c) 850 C 7 min.five of021, 11, x FOR PEER REVIEW5 ofFigure three. maps orientation maps of decarbonized along the samples direction: (a) 850 C min; (b) gure 3. EBSD orientation EBSD of decarbonized annealing samplesannealing thicknessalong the thickness path: (a) 850 C min; C 5 min; (c) 850 C 7 min. (b) 850 0 C five min; (c) 850 C 7 min.3.1.three. Grain Boundary Characteristics samples . Table 2. Content of most important texture of decarbonized annealingof Key Recrystallization The high-energy (HE) 4-Hydroxybenzylamine References boundaries model [11,19,20] states that the grain boundary Temperature defects are greater between 20 and 45 orientation distinction, the grain boundary energy Time 111112 111110 411148 110112 110001 /C /Min is higher as well as the grain boundary mobility is greater, which can be advantageous for the nucleation and 3 14.three 4.3 25.7 0.9 development of Goss oriented grains. The grain boundary5.7 a big distinction in orientation with 850 5 22.8 2.3 features a direct18.3 influence on2.7 nucleation and development of the 110 1.1 the 001 texture in the secondary recrystallization. When the amount of high-energy grain boundaries and large7 15.4 3.4 24.4 7.three 0.3 angle grain boundaries is substantial, the general storage energy from the grain boundaries can also be high. Characteristics of Major Recrystallization three.1.3. Grain BoundaryWhen the number of high-energy grain boundaries and large-angle grain boundaries is large, the all round storage energy of grain boundaries can also be boundary deThe high-energy (HE) boundaries model [11,19,20] states that the grain high, so the migration speed is fects are greaterhigh, and 20inhibitororientation difference, the grain boundary power is in between the and 45at this time has only weakly inhibiting high-energy grain boundaries and large-angle mobility is higher, which is useful to boundary to diffuse outward greater and also the grain boundary grain boundaries. The ability on the grain the nucleation and move forward is comparatively sturdy, and also the 110 001 grain is extra susceptible to and development of Goss oriented grains. The grain boundary with a large difference in oriennucleation and development. tation includes a direct influence.
